Influence of Annealing, Oxidation and Doping on Conduction-Band near Interface Traps in 4H-SiC Characterized by Low Temperature Conductance Measurements
Noll, Stefan, Rambach, Martin, Grieb, Michael, Scholten, Dick, Bauer, Anton, Frey, LotharVolume:
821-823
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/msf.821-823.476
Date:
June, 2015
File:
PDF, 320 KB
english, 2015