Site-controlled lateral arrangements of InAs quantum dots...

Site-controlled lateral arrangements of InAs quantum dots grown on GaAs(001) patterned substrates by atomic force microscopy local oxidation nanolithography

Martín-Sánchez, J, Alonso-González, P, Herranz, J, González, Y, González, L
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Volume:
20
Language:
english
Journal:
Nanotechnology
DOI:
10.1088/0957-4484/20/12/125302
Date:
March, 2009
File:
PDF, 3.60 MB
english, 2009
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