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Impact of Nitrogen Implantation on Highly Reliable Sub-Quarter-Micron Metal Oxide Field-Effect Transistors (MOSFETs) with Lightly Doped Drain Structure
Shimizu, Satoshi, Kuroi, Takashi, Kusunoki, Shigeru, Okumura, Yoshinori, Inuishi, Masahide, Miyoshi, HirokazuVolume:
35
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.35.802
Date:
February, 1996
File:
PDF, 336 KB
english, 1996