Growth of “Oxide-Less” GaN Layer by Helicon-Wave Excited...

Japanese Journal of Applied Physics 1999 / 4 Vol. 38; Iss. Part 2, No

Growth of “Oxide-Less” GaN Layer by Helicon-Wave Excited N2-Ar Plasma Treatment of Al/GaAs Structure

Okamoto, Nariaki, Kasahara, Fumio, Ikoma, Hideaki
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
38
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.38.L424
Date:
April, 1999
File:
PDF, 226 KB
english, 1999
Conversion to is in progress
Conversion to is failed