Selective Single-Crystalline-Silicon Growth at the...

Japanese Journal of Applied Physics 2003 / 1 Vol. 42; Iss. Part 1, No

Selective Single-Crystalline-Silicon Growth at the Pre-defined Active Region of a Thin Film Transistor on Glass by Using Continuous Wave Laser Irradiation

Hara, Akito, Yoshino, Kenichi, Takeuchi, Fumiyo, Sasaki, Nobuo
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Volume:
42
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.42.23
Date:
January, 2003
File:
PDF, 243 KB
english, 2003
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