Highly Manufacturable and Reliable 80-nm Gate Twin...

Japanese Journal of Applied Physics 2005 / 9 Vol. 44; Iss. No. 39

Highly Manufacturable and Reliable 80-nm Gate Twin Silicon-Oxide-Nitride-Oxide-Silicon Memory Transistor

Park, Byung-Gook, Choi, Byung Yong, Choi, Woo Young, Lee, Yong Kyu, Lee, Jong Duk, Shin, Hyungcheol, Sung, Suk-Kang, Kim, Tae-Yong, Cho, Eun Suk, Cho, Byung Kyu, Bai, Keun Hee, Kim, Dong-Dae, Kim, Don
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Volume:
44
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.44.L1214
Date:
September, 2005
File:
PDF, 164 KB
english, 2005
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