Impact of Improved High-Performance Si(110)-Oriented...

Impact of Improved High-Performance Si(110)-Oriented Metal–Oxide–Semiconductor Field-Effect Transistors Using Accumulation-Mode Fully Depleted Silicon-on-Insulator Devices

Cheng, Weitao, Teramoto, Akinobu, Hirayama, Masaki, Sugawa, Shigetoshi, Ohmi, Tadahiro
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Volume:
45
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.45.3110
Date:
April, 2006
File:
PDF, 204 KB
english, 2006
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