Impact of Improved High-Performance Si(110)-Oriented Metal–Oxide–Semiconductor Field-Effect Transistors Using Accumulation-Mode Fully Depleted Silicon-on-Insulator Devices
Cheng, Weitao, Teramoto, Akinobu, Hirayama, Masaki, Sugawa, Shigetoshi, Ohmi, TadahiroVolume:
45
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.45.3110
Date:
April, 2006
File:
PDF, 204 KB
english, 2006