Photodetective Characteristics of Metal–Oxide–Semiconductor...

Japanese Journal of Applied Physics 2007 / 4 Vol. 46; Iss. 4B

Photodetective Characteristics of Metal–Oxide–Semiconductor Tunneling Structure with Aluminum Grid Gate

Hashimoto, Hideaki, Yamada, Ryuta, Hirokane, Takaaki, Arima, Kenta, Uchikoshi, Junichi, Morita, Mizuho
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Volume:
46
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.46.2467
Date:
April, 2007
File:
PDF, 200 KB
english, 2007
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