Effective Dopant Activation in Silicon Film Using Excimer...

Japanese Journal of Applied Physics 2008 / 3 Vol. 47; Iss. 3

Effective Dopant Activation in Silicon Film Using Excimer Laser Annealing for High-Performance Thin Film Transistors

Noguchi, Takashi
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Volume:
47
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.47.1858
Date:
March, 2008
File:
PDF, 748 KB
english, 2008
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