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Comparative Study of p + /n + Gate Modified Saddle Metal Oxide Semiconductor Field Effect Transistors and p + /n + Gate Bulk Fin Field Effect Transistors for Sub-40 nm Dynamic Random Access Memory Cell Transistors
Park, Ki-Heung, Lee, Jong-HoVolume:
47
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.47.5365
Date:
July, 2008
File:
PDF, 620 KB
english, 2008