Deep Trap States in Si 3 N...

Japanese Journal of Applied Physics 1981 / 5 Vol. 20; Iss. 5

Deep Trap States in Si 3 N 4 Layer on Si Substrate

Fujita, Shizuo, Nishihara, Michinori, Hoi, Won-Lon, Sasaki, Akio
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Volume:
20
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.20.917
Date:
May, 1981
File:
PDF, 290 KB
english, 1981
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