Oxide Resistance Characterization in MOS Structures by the...

Japanese Journal of Applied Physics 1990 / 7 Vol. 29; Iss. Part 1, No

Oxide Resistance Characterization in MOS Structures by the Voltage Decay Method

Hwu, Jenn-Gwo, Ho, I-Hsiu
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Volume:
29
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.29.1243
Date:
July, 1990
File:
PDF, 203 KB
english, 1990
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