Hydrogenated Amorphous Silicon Carbide/Silicon Metal-Base...

Japanese Journal of Applied Physics 1990 / 5 Vol. 29; Iss. Part 2, No

Hydrogenated Amorphous Silicon Carbide/Silicon Metal-Base Transistor

Jwo, Shin-Cherng
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Volume:
29
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.29.L746
Date:
May, 1990
File:
PDF, 673 KB
1990
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