Low Temperature Poly-Si TFTs Using Solid Phase...

Japanese Journal of Applied Physics 1991 / 12 Vol. 30; Iss. Part 1, No

Low Temperature Poly-Si TFTs Using Solid Phase Crystallization of Very Thin Films and an Electron Cyclotron Resonance Chemical Vapor Deposition Gate Insulator

Little, Thomas W., Takahara, Ken-ichi, Koike, Hideki, Nakazawa, Takashi, Yudasaka, Ichio, Ohshima, Hiroyuki
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
30
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.30.3724
Date:
December, 1991
File:
PDF, 194 KB
english, 1991
Conversion to is in progress
Conversion to is failed