Formation of Crystalline SiC Buried Layer by High-Dose...

Japanese Journal of Applied Physics 1993 / 9 Vol. 32; Iss. Part 2, No

Formation of Crystalline SiC Buried Layer by High-Dose Implantation of MeV Carbon Ions at High Temperature

Chayahara, Akiyoshi, Kiuchi, Masato, Kinomura, Atsushi, Mokuno, Yoshiaki, Horino, Yuji, Fujii, Kanenaga
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Volume:
32
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.32.L1286
Date:
September, 1993
File:
PDF, 204 KB
english, 1993
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