Phase Noise Enhancement of the GaAs High Electron Mobility...

Japanese Journal of Applied Physics 1999 / 6 Vol. 38; Iss. Part 2, No

Phase Noise Enhancement of the GaAs High Electron Mobility Transistors Using Micromachined Cavity Resonators at Ka-band

Song, Insang, Kim, Chungwoo, Kwon, Youngwoo, Cheon, Changyul, Song, Cimoo
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Volume:
38
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.38.L601
Date:
June, 1999
File:
PDF, 141 KB
english, 1999
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