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Improvement in Antimony-Doped Ultrashallow Junction Sheet Resistance by Dopant Pileup Reduction at the SiO 2 /Si Interface
Shibahara, Kentaro, Egusa, Kazuhiko, Kamesaki, Koji, Furumoto, HiroakiVolume:
39
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.39.2194
Date:
April, 2000
File:
PDF, 176 KB
english, 2000