Simulation of Dopant Redistribution During Gate Oxidation...

Japanese Journal of Applied Physics 2000 / 5 Vol. 39; Iss. Part 1, No

Simulation of Dopant Redistribution During Gate Oxidation Including Transient-Enhanced Diffusion Caused by Implantation Damage

Uchida, Tetsuya, Eikyu, Katsumi, Tsukuda, Eiji, Fujinaga, Masato, Teramoto, Akinobu, Yamashita, Tomohiro, Kunikiyo, Tatsuya, Ishikawa, Kiyoshi, Kotani, Norihiko, Kawazu, Satoru, Hamaguchi, Chihiro, Ni
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Volume:
39
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.39.2565
Date:
May, 2000
File:
PDF, 401 KB
english, 2000
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