Suppression of Stress-Induced Leakage Current of Wet and...

Japanese Journal of Applied Physics 2003 / 9 Vol. 42; Iss. Part 1, No

Suppression of Stress-Induced Leakage Current of Wet and Dry SiO 2 by SiD 4 Poly-Si Gate Electrode

Mitani, Yuichiro, Satake, Hideki
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Volume:
42
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.42.5426
Date:
September, 2003
File:
PDF, 183 KB
english, 2003
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