Vapor Pressure of Hf and Si Precursors for Hf...

Japanese Journal of Applied Physics 2004 / 3 Vol. 43; Iss. 3

Vapor Pressure of Hf and Si Precursors for Hf x Si 1- x O 2 Deposition Evaluated by a Saturated Gas Technique

Machida, Hideaki, Kada, Takeshi, Ishikawa, Masato, Ogura, Atsushi, Ohshita, Yoshio
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Volume:
43
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.43.966
Date:
March, 2004
File:
PDF, 1.08 MB
english, 2004
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