Improvement of Oxidation-Induced Ge Condensation Method by H + Implantation and Two-Step Annealing for Highly Stress-Relaxed SiGe-on-Insulator
Sadoh, Taizoh, Matsuura, Ryo, Ninomiya, Masaharu, Nakamae, Masahiko, Enokida, Toyotsugu, Hagino, Hiroyasu, Miyao, MasanobuVolume:
44
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.44.2357
Date:
April, 2005
File:
PDF, 297 KB
english, 2005