Electrical Properties of Ga Ion Beam Implanted GaAs...

Japanese Journal of Applied Physics 1985 / 12 Vol. 24; Iss. Part 2, No

Electrical Properties of Ga Ion Beam Implanted GaAs Epilayer

Hirayama, Yoshiro, Okamoto, Hiroshi
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Volume:
24
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.24.L965
Date:
December, 1985
File:
PDF, 191 KB
english, 1985
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