Room-Temperature Characterization of Midgap Level (EL2) in...

Japanese Journal of Applied Physics 1986 / 7 Vol. 25; Iss. Part 2, No

Room-Temperature Characterization of Midgap Level (EL2) in GaAs Diodes without Metallization Processes

Okumura, Tsugunori, Hoshino, Minoru
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Volume:
25
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.25.L548
Date:
July, 1986
File:
PDF, 134 KB
english, 1986
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