Fabrication of P-N Junction Diodes Using Homoepitaxially...

Fabrication of P-N Junction Diodes Using Homoepitaxially Grown 6H-SiC at Low Temperature by Chemical Vapor Deposition

Shibahara, Kentaro, Kuroda, Naotaka, Nishino, Shigehiro, Matsunami, Hiroyuki
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Volume:
26
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.26.L1815
Date:
November, 1987
File:
PDF, 439 KB
1987
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