Impact of Negative-Bias Temperature Instability on the...

Japanese Journal of Applied Physics 1996 / 2 Vol. 35; Iss. Part 1, No

Impact of Negative-Bias Temperature Instability on the Lifetime of Single-Gate CMOS Structures with Ultrathin (4–6 nm) Gate Oxides

Ogawa, Shigeo, Shimaya, Masakazu, Shiono, Noboru
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Volume:
35
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.35.1484
Date:
February, 1996
File:
PDF, 297 KB
english, 1996
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