Enhanced Growth Mechanism in Lateral Solid-Phase Epitaxy of...

Japanese Journal of Applied Physics 1996 / 3 Vol. 35; Iss. Part 1, No

Enhanced Growth Mechanism in Lateral Solid-Phase Epitaxy of Si Films Simultaneously Doped with P and Ge Atoms

Oh, Jeong-Hee, Kim, Chul-Ju, Ishiwara, Hiroshi
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Volume:
35
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.35.1605
Date:
March, 1996
File:
PDF, 412 KB
english, 1996
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