Epitaxial Growth of Ti1- xAl xN Buffer Layer for a...

Japanese Journal of Applied Physics 1998 / 2 Vol. 37; Iss. Part 2, No

Epitaxial Growth of Ti1- xAl xN Buffer Layer for a Ferroelectric (Ba, Sr)TiO3 Capacitor on Si Substrate

Yanase, Naoko, Sano, Kenya, Abe, Kazuhide, Kawakubo, Takashi
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Volume:
37
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.37.L151
Date:
February, 1998
File:
PDF, 370 KB
english, 1998
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