Improved Ti Self-Aligned Silicide Technology Using High...

Japanese Journal of Applied Physics 1999 / 4 Vol. 38; Iss. Part 1, No

Improved Ti Self-Aligned Silicide Technology Using High Dose Ge Pre-Amorphization for 0.10 µm CMOS and Beyond

Ohuchi, Kazuya, Miyashita, Katsura, Murakoshi, Atsushi, Yoshimura, Hisao, Suguro, Kyoichi, Toyoshima, Yoshiaki
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Volume:
38
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.38.2238
Date:
April, 1999
File:
PDF, 855 KB
english, 1999
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