Growth Mechanism during Silicon Epitaxy by Photochemical...

Japanese Journal of Applied Physics 1999 / 6 Vol. 38; Iss. Part 1, No

Growth Mechanism during Silicon Epitaxy by Photochemical Vapor Deposition at Low Temperatures

Abe, Katsuya, Watahiki, Tatsuro, Yamada, Akira, Konagai, Makoto
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Volume:
38
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.38.3622
Date:
June, 1999
File:
PDF, 1.65 MB
1999
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