Room Temperature Deposition of Silicon Nitride Films for...

Japanese Journal of Applied Physics 1999 / 8 Vol. 38; Iss. Part 1, No

Room Temperature Deposition of Silicon Nitride Films for Passivation of Organic Electroluminescence Device Using a Sputtering-Type Electron Cyclotron Resonance Plasma

Gao, Dawei, Furukawa, Katsuhiko, Nakashima, Hiroshi, Gao, Junsi, Wang, Junli, Muraoka, Katsunori
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Volume:
38
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.38.4868
Date:
August, 1999
File:
PDF, 556 KB
english, 1999
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