Structural Characterization of High-Quality ZnS Epitaxial...

Japanese Journal of Applied Physics 2001 / 12 Vol. 40; Iss. Part 1, No

Structural Characterization of High-Quality ZnS Epitaxial Layers Grown on GaAs Substrates by Low-Pressure Metalorganic Chemical Vapor Deposition

Nakamura, Seiji, Takagimoto, Shinsuke, Ando, Tsuyoshi, Yamada, Yoichi, Taguchi, Tsunemasa
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Volume:
40
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.40.6993
Date:
December, 2001
File:
PDF, 344 KB
english, 2001
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