Rectifying I-V Characteristics of n-Type Fluorine Implanted...

Japanese Journal of Applied Physics 2004 / 01 Vol. 43; Iss. 1A/B

Rectifying I-V Characteristics of n-Type Fluorine Implanted a-C/p-Type Si Heterojunction Diodes

Narayanan, Kannan L., Soga, Tetsuo, Ekins-Daukes, Nicholas J., Yamaguchi, Masafumi
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Volume:
43
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.43.L24
Date:
January, 2004
File:
PDF, 897 KB
english, 2004
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