Growth of ZnSe Epilayer on Si Using Ge/Ge x...

Japanese Journal of Applied Physics 2004 / 6 Vol. 43; Iss. No. 6B

Growth of ZnSe Epilayer on Si Using Ge/Ge x Si 1- x Buffer Structure

Yang, Tsung-Hsi, Yang, Chu Shou, Luo, Guangli, Chou, Wu Ching, Yang, Tsung-Yeh, Chang, Edward Yi, Chang, Chun-Yen
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Volume:
43
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.43.L811
Date:
June, 2004
File:
PDF, 421 KB
english, 2004
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