Impact of Band Alignment on Line Electron Density and Channel Capacitance of Rectangular n-Channel Gate-All-Around Wire Field-Effect Transistor
Sato, Shingo, Omura, YasuhisaVolume:
47
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.47.1706
Date:
March, 2008
File:
PDF, 863 KB
2008