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Oxide Growth Rate Enhancement of Silicon Carbide (0001) Si-Faces in Thin Oxide Regime
Yamamoto, Takeshi, Hijikata, Yasuto, Yaguchi, Hiroyuki, Yoshida, SadafumiVolume:
47
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.47.7803
Date:
October, 2008
File:
PDF, 137 KB
english, 2008