Characterization of Tunneling Current through Ultrathin...

Japanese Journal of Applied Physics 2008 / 11 Vol. 47; Iss. 11

Characterization of Tunneling Current through Ultrathin Silicon Dioxide Films by Different-Metal Gates Method

Hirokane, Takaaki, Yoshii, Naoto, Okazaki, Tatsuya, Urabe, Shinichi, Nishimura, Kazuo, Morita, Satoru, Arima, Kenta, Uchikoshi, Junichi, Morita, Mizuho
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Volume:
47
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.47.8317
Date:
November, 2008
File:
PDF, 117 KB
english, 2008
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