Evaluation of Threshold-Voltage Variation in Silicon on...

Japanese Journal of Applied Physics 2009 / 4 Vol. 48; Iss. 4

Evaluation of Threshold-Voltage Variation in Silicon on Thin Buried Oxide Complementary Metal–Oxide–Semiconductor and Its Impact on Decreasing Standby Leakage Current

Sugii, Nobuyuki, Tsuchiya, Ryuta, Ishigaki, Takashi, Morita, Yusuke, Yoshimoto, Hiroyuki, Iwamatsu, Toshiaki, Oda, Hidekazu, Inoue, Yasuo, Hiramoto, Toshiro, Kimura, Shin'ichiro
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Volume:
48
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.48.04C043
Date:
April, 2009
File:
PDF, 263 KB
english, 2009
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