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Analytic Oxide Capacitance Model of Double- and Surrounding-Gate Metal–Oxide–Semiconductor Field-Effect Transistors in Linear Region by Considering Inversion-Layer Capacitance
Choi, Byung-Kil, Jeong, Min-Kyu, Kwon, Hyuck-In, Lee, Jong-HoVolume:
49
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.49.104201
Date:
October, 2010
File:
PDF, 191 KB
english, 2010