Engineering of Si-Rich Nitride Charge-Trapping Layer for...

Japanese Journal of Applied Physics 2012 / 2 Vol. 51

Engineering of Si-Rich Nitride Charge-Trapping Layer for Highly Reliable Metal–Oxide–Nitride–Oxide–Semiconductor Type NAND Flash Memory with Multi-Level Cell Operation

Fujitsuka, Ryota, Sekine, Katsuyuki, Sekihara, Akiko, Fukumoto, Atsushi, Fujita, Junya, Aiso, Fumiki, Ozawa, Yoshio
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Volume:
51
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.51.021103
Date:
February, 2012
File:
PDF, 1.55 MB
english, 2012
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