Characterization of Top-Gate Effects in Amorphous...

Japanese Journal of Applied Physics 2012 / 9 Vol. 51

Characterization of Top-Gate Effects in Amorphous InGaZnO$_{4}$ Thin-Film Transistors Using a Dual-Gate Structure

Takechi, Kazushige, Iwamatsu, Shinnosuke, Yahagi, Toru, Watanabe, Yoshiyuki, Kobayashi, Seiya, Tanabe, Hiroshi
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Volume:
51
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.51.104201
Date:
September, 2012
File:
PDF, 552 KB
english, 2012
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