Interface roughness and period variations in the AlGaAs...

Semiconductor Science and Technology 1991 / 01 Vol. 6; Iss. 1

Interface roughness and period variations in the AlGaAs system grown by molecular beam epitaxy

Fewster, P F, Andrew, N L, Curling, C J
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Volume:
6
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/6/1/002
Date:
January, 1991
File:
PDF, 406 KB
english, 1991
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