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Universal Correlation between Flatband Voltage and Electron Mobility in TiN/HfSiON Devices with MgO or La2O3Incorporation and Stack Variation
N. Mise, M. Kadoshima, T. Morooka, T. Eimori, Y. Nara, Y. OhjiYear:
2008
Language:
english
DOI:
10.1143/JJAP.47.7780
File:
PDF, 225 KB
english, 2008