AIP Conference Proceedings [AIP PROCEEDING OF INTERNATIONAL CONFERENCE ON RECENT TRENDS IN APPLIED PHYSICS AND MATERIAL SCIENCE: RAM 2013 - Bikaner, Rajasthan, India (1–2 February 2013)] - Back gated strained-Si (s-Si) on silicon-germanium-on-insulator (SGOI) MOSFETs for improved switching speed and short-channel effects (SCEs)

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