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[IEEE 2015 73rd Annual Device Research Conference (DRC) - Columbus, OH, USA (2015.6.21-2015.6.24)] 2015 73rd Annual Device Research Conference (DRC) - P-channel Tunneling Field Effect Transistor (TFET): Sub-10nm technology enablement by GaSb-InAs with doped source underlap
Sharma, Ankit, Goud, A. Arun, Roy, KaushikYear:
2015
Language:
english
DOI:
10.1109/DRC.2015.7175600
File:
PDF, 1.16 MB
english, 2015