Electrical properties of in situ As doped Hg[sub 1−x]Cd[sub...

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Electrical properties of in situ As doped Hg[sub 1−x]Cd[sub x]Te epilayers grown by molecular beam epitaxy

Y. Selamet, C. H. Grein, T. S. Lee, S. Sivananthan
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Year:
2001
Language:
english
DOI:
10.1116/1.1374628
File:
PDF, 630 KB
english, 2001
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