Effect of Thin Oxide Film on Breakdown Voltage of Silicon...

Japanese Journal of Applied Physics 1974 / 2 Vol. 13; Iss. 2

Effect of Thin Oxide Film on Breakdown Voltage of Silicon N +P Junction

Matsumoto, Kazushige, Haneta, Yuichi
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Volume:
13
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.13.367
Date:
February, 1974
File:
PDF, 1.12 MB
english, 1974
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