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Properties of Metal-Semiconductor Field-Effect Transistors Fabricated on Carbon-Doped Semi-Insulating GaAs Crystal Grown by Liquid Encapsulated Czochralski Method
Otoki, Yoohei, Watanabe, Masatoshi, Kuma, Shoji, Takahashi, Susumu, Onishi, Masaya, Kashiwa, MikioVolume:
32
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.32.L1297
Date:
September, 1993
File:
PDF, 802 KB
english, 1993