Dry Etching Damage and Activation Ratio Degradation in δ -Doped AlGaAs/InGaAs High Electron Mobility Transistors
Tanimoto, Takuma, Kudo, Makoto, Mori, Mitsuhiro, Kodera, HiroshiVolume:
33
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.33.L260
Date:
February, 1994
File:
PDF, 116 KB
english, 1994