N-Channel Metal-Oxide-Semiconductor Device with the...

Japanese Journal of Applied Physics 1995 / 10 Vol. 34; Iss. Part 2, No

N-Channel Metal-Oxide-Semiconductor Device with the Step-Functional I-V Curves Caused by the Punch-Through between Drain and Inversion Layer of the Gate

Karasawa, Shinji, Yamanouchi, Kazuhiko, Omori, Junichi
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Volume:
34
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.34.L1257
Date:
October, 1995
File:
PDF, 357 KB
english, 1995
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