Excitonic Emission in GaN Films on AlN Substrates Using...

Japanese Journal of Applied Physics 1996 / 2 Vol. 35; Iss. Part 1, No

Excitonic Emission in GaN Films on AlN Substrates Using Microwave-Excited N Plasma Method

Kai, Ayako, Okada, Kiyohiko, Yamada, Yoichi, Taguchi, Tsunemasa, Sasaki, Fumio, Kobayashi, Shunsuke, Tani, Toshiro, Taniguchi, Hitofumi
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Volume:
35
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.35.1424
Date:
February, 1996
File:
PDF, 311 KB
english, 1996
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